Наличие Infineon IKW75N60TFKSA1 на складах.
Дистрибьютор
Наличие и цена
Технические характеристики Infineon IKW75N60TFKSA1, атрибуты и параметры.
Lead-Free Status:
Lead Free
Mounting Style:
Through Hole
Рабочая Температура:
-40.0 °C to 175 °C
Упаковка:
Tube
Количество выводов:
3
Полярность:
N-Channel
Рассеяние мощности:
428 W
REACH SVHC Compliance:
No SVHC
RoHS:
Compliant
- Trans IGBT Chip N-CH 600V 80A 428000mW 3-Pin(3+Tab) TO-247 Tube
- IKW75N60T Series 600 V 75 A Through Hole TRENCHSTOP IGBT - PG-TO247-3
- 600 V IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS
- IGBT, N, 600V, 75A, TO-247
- Тип транзистора: IGBT
- DC Collector Current:80A
- Collector Emitter Voltage Vces:2V
- Power Dissipation Pd:428W
- Collector Emitter Voltage V(br)ceo:600V
- Operating Temperature Range:-40°C to +175°C
- Transistor Case Style:TO-247
- Количество контактов: 3
- SVHC: Нет SVHC (19 декабря 2011 г.)
- Current Ic Continuous a Max:75A
- Количество транзисторов: 1
- Package / Case:TO-247
- Power Dissipation Max:428W
- Power Dissipation Pd:428W
- Тип прекращения: сквозное отверстие
- Transistor Polarity:N Channel
- Voltage Vces:600V
- Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery Emitter Controlled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V CEsat drop for lower conduction losses
- Low switching losses
- Easy parallel switching capability due to positive temperature coefficient in V CEsat
- Very soft, fast recovery anti-parallel Emitter Controlled Diode
- High ruggedness, temperature stable behavior
- Low EMI emissions
- Low gate charge
- Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses
- Comprehensive portfolio in 600V and 1200V for flexibility of design
- High device reliability
