ON Semiconductor
N25S830HAS22I

Микросхема памяти SRAM N25S830HAS22I; 256кбит; 2,7 - 3,6 В; 25 нс 8-контактный SOIC

Цена от 28,70 ₽ до 1 020,73 ₽

Дистрибьютор

Наличие и цена

Тип корпуса / Кейс:

SOIC

Clock Speed:

20.0 MHz

Частота:

16.0 MHz

Halogen Free Status:

Halogen Free

Lead-Free Status:

Lead Free

Статус жизненного цикла:

Active

Размер памяти:

32000 B

Mounting Style:

Surface Mount

Рабочая Температура:

-40.0 °C (min)

Упаковка:

Tube, Rail

Количество выводов:

RoHS:

Compliant

Supply Voltage (DC):

3.60 V (max), 2.70 V (min)

Чип памяти SRAM N25S830HAS22I
256 кбит
2,7 - 3,6 В
25 нс 8-контактный SOIC
SRAM Chip Sync Single 3V 256K-Bit 32K x 8 25ns 8-Pin SOIC N Tube
Серия N25S830HA, 256 Кбайт, 3 В, последовательная SRAM малой мощности - SOIC-8
RAM SRAM 256Kb (32K x 8) SPI SOIC-8_150mil RoHS
Serial SRAM Memory, 256-kb, 3.0 V
SRAM, 256KBIT, SERIAL, 20MHZ, 8-SOIC
SRAM, 256KBIT, 32K X 8BIT, SOIC-8
The ON Semiconductor serial SRAM family includes several integrated memory devices including this 256 kb serially accessed Static Random Access Memory internally organized as 32 k words by 8 bits. The devices are designed and fabricated using advanced CMOS technology to provide both high-speed performance and low power. The devices operate with a single chip select (CS) input and use a simple Serial Peripheral Interface (SPI) serial bus. A single data in and data out line is used along with a clock to access data within the devices. The N25S830HA devices include a HOLD pin that allows communication to the device to be paused. While paused input transitions will be ignored. The devices can operate over a wide temperature range of -40C to +85C and can be available in several standard package offerings.