Texas Instruments
SN74V293-6PZA
FIFO Mem Sync Dual Depth / Width Uni-Dir 64K x 18 / 128K x 9 80-контактный лоток LQFP
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Технические характеристики Texas Instruments SN74V293-6PZA, атрибуты и параметры.
Тип корпуса / Кейс:
LQFP
Clock Speed:
166 MHz (max)
Частота:
166 MHz
Lead-Free Status:
Contains Lead
Статус жизненного цикла:
Active
Mounting Style:
Surface Mount
Рабочая Температура:
70.0 °C (max)
Output Current Drive:
-250 µA
Упаковка:
Bulk
Количество выводов:
80
RoHS:
Compliant
Supply Voltage (DC):
3.15 V to 3.45 V
Voltage Nodes:
3.30 V
- FIFO Mem Sync Dual Depth / Width Uni-Dir 64K x 18 / 128K x 9 80-контактный лоток LQFP
- 65536 x 18 Synchronous FIFO Memory 80-LQFP 0 to 70
- The SN74V263, SN74V273, SN74V283, and SN74V293 are exceptionally deep, high-speed, CMOS first-in first-out (FIFO) memories with clocked read and write controls and a flexible bus-matching *9/*18 data flow. There is flexible *9/*18 bus matching on both read and write ports. The period required by the retransmit operation is fixed and short. The first-word data-latency period, from the time the first word is written to an empty FIFO to the time it can beread, is fixed and short. These FIFOs are particularly appropriate for network, video, telecommunications, data communications, andother applications that need to buffer large amounts of data and match buses of unequal sizes. Each FIFO has a data input port (Dn) and a data output port (Qn), both of which can assume either an 18-bitor 9-bit width, as determined by the state of external control pins' input width (IW) and output width (OW) during the master-reset cycle. The input port is controlled by write-clock (WCLK) and write-enable (WEN) inputs. Data is written into the FIFO on every rising edge of WCLK when WEN is asserted. The output port is controlled by read-clock (RCLK) and read-enable (REN) inputs. Data is read from the FIFO on every rising edge of RCLK when REN is asserted. An output-enable (OE) input is provided for 3-state control of the outputs. Copyright (C) 2003, Texas Instruments Incorporated Production DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Документы по Texas Instruments SN74V293-6PZA, инструкции, описания, datasheet.
Товары похожие на Texas Instruments SN74V293-6PZA, сравнение характеристик.
Тип корпуса / Кейс LQFP.
Clock Speed 133 MHz (max).
Частота 133 MHz.
Lead-Free Status Contains Lead.
Статус жизненного цикла Active.
Mounting Style Surface Mount.
Рабочая Температура 70.0 °C (max).
Output Current Drive -250 µA.
Упаковка Bulk.
Количество выводов 80.
RoHS Compliant.
Supply Voltage (DC) 3.15 V to 3.45 V.
Voltage Nodes 3.30 V.
Тип корпуса / Кейс LQFP.
Clock Speed 66.7 MHz (max).
Частота 66.7 MHz.
Lead-Free Status Contains Lead.
Статус жизненного цикла Active.
Размер памяти 72000 B.
Mounting Style Surface Mount.
Рабочая Температура 70.0 °C (max).
Output Current Drive -250 µA.
Упаковка Bulk.
Количество выводов 80.
RoHS Compliant.
Supply Voltage (DC) 3.15 V to 3.45 V.
Voltage Nodes 3.30 V.
Тип корпуса / Кейс LQFP.
Clock Speed 166 MHz (max).
Частота 166 MHz.
Lead-Free Status Contains Lead.
Статус жизненного цикла Active.
Размер памяти 18000 B.
Mounting Style Surface Mount.
Рабочая Температура 70.0 °C (max).
Output Current Drive -250 µA.
Упаковка Bulk.
Количество выводов 80.
RoHS Compliant.
Supply Voltage (DC) 3.15 V to 3.45 V.
Voltage Nodes 3.30 V.
Тип корпуса / Кейс LQFP.
Clock Speed 166 MHz (max).
Частота 166 MHz.
Lead-Free Status Contains Lead.
Статус жизненного цикла Active.
Размер памяти 72000 B.
Mounting Style Surface Mount.
Рабочая Температура 70.0 °C (max).
Output Current Drive -250 µA.
Упаковка Bulk.
Количество выводов 80.
RoHS Compliant.
Supply Voltage (DC) 3.15 V to 3.45 V.
Voltage Nodes 3.30 V.
Тип корпуса / Кейс LQFP.
Clock Speed 166 MHz (max).
Частота 166 MHz.
Lead-Free Status Contains Lead.
Статус жизненного цикла Active.
Размер памяти 36000 B.
Mounting Style Surface Mount.
Рабочая Температура 70.0 °C (max).
Output Current Drive -250 µA.
Упаковка Bulk.
Количество выводов 80.
RoHS Compliant.
Supply Voltage (DC) 3.15 V to 3.45 V.
Voltage Nodes 3.30 V.
Тип корпуса / Кейс LQFP.
Частота 133 MHz.
Lead-Free Status Contains Lead.
Статус жизненного цикла Active.
Mounting Style Surface Mount.
Рабочая Температура -55.0 °C to 125 °C.
Output Current Drive -250 µA.
Количество выводов 80.
RoHS Compliant.
Supply Voltage (DC) 3.15 V to 3.45 V.
Voltage Nodes 3.30 V.
Тип корпуса / Кейс LQFP.
Частота 133 MHz.
Lead-Free Status Contains Lead.
Статус жизненного цикла Active.
Mounting Style Surface Mount.
Рабочая Температура -55.0 °C to 125 °C.
Output Current Drive -250 µA.
Количество выводов 80.
RoHS Compliant.
Supply Voltage (DC) 3.15 V to 3.45 V.
Voltage Nodes 3.30 V.
Тип корпуса / Кейс LQFP.
Частота 133 MHz.
Lead-Free Status Contains Lead.
Статус жизненного цикла Active.
Mounting Style Surface Mount.
Рабочая Температура -55.0 °C to 125 °C.
Output Current Drive -250 µA.
Количество выводов 80.
RoHS Compliant.
Supply Voltage (DC) 3.15 V to 3.45 V.
Voltage Nodes 3.30 V.
Тип корпуса / Кейс LQFP.
Частота 133 MHz.
Lead-Free Status Contains Lead.
Статус жизненного цикла Active.
Mounting Style Surface Mount.
Рабочая Температура -55.0 °C to 125 °C.
Output Current Drive -250 µA.
Количество выводов 80.
RoHS Compliant.
Supply Voltage (DC) 3.15 V to 3.45 V.
Voltage Nodes 3.30 V.